? 2004 ixys all rights reserved 1 - 4 4 1 8 symbol conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c; r ge = 20 k ? 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 38 a i c90 t c = 90c 25 a i cm t c = 90c, t p = 1 ms 50 a rbsoa v ge = 15 v, t j = 125c, r g = 82 ? i cm = 35 a clamped inductive load, l = 30 h v cek < v ces t sc v ge = 15 v, v ce = v ces , t j = 125c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c igbt 200 w diode 75 w t j -55 ... +150 c t stg -40< ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s m d mounting torque 0.8 - 1.2 nm weight 6g v ces = 1200 v i c25 = 38 a v ce(sat) typ = 2.4 v features npt igbt technology low saturation voltage low switching losses square rbsoa, no latch up high short circuit capability positive temperature coefficient for easy paralleling mos input, voltage controlled optional ultra fast diode international standard package advantages space savings high power density typical applications ac motor speed control dc servo and robot drives dc choppers uninteruptible power supplies (ups) switch-mode and resonant-mode power supplies high voltage igbt with optional diode short circuit soa capability square rbsoa ixdh 20n120 ixdh 20n120 d1 symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v (br)ces v ge = 0 v 1200 v v ge(th) i c = 0.6 ma, v ce = v ge 4.5 6.5 v i ces v ce = v ces t j = 25c 1 ma t j = 125c 2 ma i ges v ce = 0 v, v ge = 20 v 500 na v ce(sat) i c = 20 a, v ge = 15 v 2.4 3 v to-247 ad g = gate, e = emitter c = collector , tab = collector g e c c (tab) ixdh 20n120 ixdh 20n120 d1 g c e g c e
? 2004 ixys all rights reserved 2 - 4 4 1 8 ixdh 20n120 ixdh 20n120 d1 symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. c ies 1000 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 150 pf c res 70 pf q g i c = 20 a, v ge = 15 v, v ce = 0.5 v ces 70 nc t d(on) 100 ns t r 75 ns t d(off) 500 ns t f 70 ns e on 3.1 mj e off 2.4 mj r thjc 0.63 k/w r thch package with heatsink compound 0.25 k/w inductive load, t j = 125c i c = 20 a, v ge = 15 v, v ce = 600 v, r g = 82 ? reverse diode (fred) [d1 version only] characteristic values (t j = 25c, unless otherwise specified) symbol conditions min. typ. max. v f i f = 20 a, v ge = 0 v 2.6 2.9 v i f = 20 a, v ge = 0 v, t j = 125c 2.1 v i f t c = 25c 31 a t c = 90c 19 a i rm i f = 20 a, -di f /dt = 400 a/s, v r = 600 v 15 a t rr v ge = 0 v, t j = 125c 200 ns t rr i f = 1 a, -di f /dt = 100 a/s, v r = 30 v, v ge = 0 v 40 ns r thjc 1.6 k/w to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2004 ixys all rights reserved 3 - 4 4 1 8 ixdh 20n120 ixdh 20n120 d1 0 100 200 300 400 0 5 10 15 20 0 100 200 300 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 45 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 0 1020304050607080 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 35 40 13v 11v t j = 25c v ge =17v t j = 125c v ce = 600v i c = 20a 15v 567891011 0 5 10 15 20 25 30 35 40 13v 11v v ge =17v 15v v ce = 20v t j = 25c 9v 9v v ce v a i c v ce a i c v v v v ge v f a i c a i f nc q g -di/dt v v ge a i rm t rr ns a/ s IXDH20N120d1 t j = 125c v r = 600v i f = 20a t j = 25c t j = 125c i rm t rr fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode (d1 version only) fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode (d1 version only)
? 2004 ixys all rights reserved 4 - 4 4 1 8 ixdh 20n120 ixdh 20n120 d1 fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and switching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse bi ased safe operating area fig. 12 typ. transient thermal impedance rbsoa 0 10203040 0 1 2 3 4 5 6 7 0 20 40 60 80 100 120 140 0 10203040 0 1 2 3 4 5 0 100 200 300 400 500 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 0 50 100 150 200 250 300 350 0 1 2 3 4 0 400 800 1200 1600 0 50 100 150 200 250 300 350 0 4 8 12 0 80 160 240 single pulse v ce = 600v v ge = 15v r g = 82 ? t j = 125c IXDH20N120d1 v ce = 600v v ge = 15v i c = 20a t j = 125c 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 r g = 82 ? t j = 125c v cek < v ces v ce = 600v v ge = 15v r g = 82 ? t j = 125c e on v ce = 600v v ge = 15v i c = 20a t j = 125c t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a e off e on t t r g ? r g ? v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt diode v a mj ns ns mj
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